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首頁 >IR020L>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD020	文件：238.94 Kbytes Page：6 Pages	HEXFETTRANSISTORSN-CHANNELHEXDIP 50Volt,0.10Ohm,1-WattHEXDIP HEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedevicerugg	IRF International Rectifier	IRF
IRFD020	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020	文件：246.45 Kbytes Page：9 Pages	PowerMOSFET	TFUNKVishay Telefunken 威世威世（VISHAY）集團	TFUNK
IRFD020	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Forautomaticinsertion ?Compact,endstackable ?Fastswitching ?Easeofparalleling ?Excellenttemperaturestability ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadva	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：222.71 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness.HVMDIPsfeatureallofthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD020PBF	文件：248.45 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.71489 Mbytes Page：9 Pages	HEXFETRPowerMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniq	IRF International Rectifier	IRF
IRFR020	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR020	文件：674.87 Kbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
IRFR020	文件：321.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR020	文件：1.05947 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR020,SiHFR020) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020PBF	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR020TR	文件：1.84644 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020TR	文件：1.05728 Mbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR020TR	文件：4.37106 Mbytes Page：9 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques. FEATU	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導(dǎo)體有限公司	IR020L	IR	24+	TO263-2.5	1000		詢價
深圳市勤思達科技有限公司	IR020L	IOR	10+	TO263	7800	全新原裝正品,現(xiàn)貨銷售	詢價
深圳市興燦科技有限公司	IR020L	IR	24+	TO263-2.5	2000	全新進口原裝現(xiàn)貨熱賣!	詢價
深圳市河鋒鑫科技有限公司	IR020L	IR	22+	TO263-2.5	6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IR020L	IR	23+	TO263-2.5	8000	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市宏世佳電子科技有限公司	IR020L	IOR	2023+	TO263	3645	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價
深圳市安富世紀(jì)電子有限公司	IR020L	IR	23+	TO263-2.5	8000	專注配單,只做原裝進口現(xiàn)貨	詢價
天津市博通航睿技術(shù)有限公司	IR020L	IR	23+	TO263-2.5	7000		詢價
深圳市博浩通科技有限公司	IR022	IOR	23+	原廠原裝	1002	專業(yè)優(yōu)勢供應(yīng)	詢價
深圳市宏捷佳電子科技有限公司	IR-0222H	DIT	24+	LINE FILTER 250VDC/VAC 2A PNL	9350	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價

更多IR020L供應(yīng)商更新時間2024-12-28 16:30:00

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