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IPW50R350CP

CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW50R350CP

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPP50R350CP

N-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IIPW50R350CP

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA50R350CP

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPA50R350CP

CoolMOSTMPowerTransistor

Features ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC0)fortargetapplications CoolMOSCPisdesignedfor: ?HardandsoftswitchingSMPStopologies ?CC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA50R350CP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=-10V DESCRIPTION ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI50R350CP

iscN-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI50R350CP

CoolMOSTMPowerTransistor

Features ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisspeciallydesignedfor: ?HardandsoftswitchingSMPSforse

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP50R350CP

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP50R350CP

N-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP50R350CP

CoolMOSTMPowerTransistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: ?Ha

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    IPW50R350CP

  • 功能描述：

    MOSFET COOL MOS N-CH 500V 0.350Ohms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
英飛翎
17+
TO-247
31518
原裝正品 可含稅交易
 詢價
INFINEON/英飛凌
2021+
TO-247
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
Infineon(英飛凌)
23+
TO-247
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
24+
PG-TO247-3
8866
詢價
Infineon
24+
TO220-3
17900
MOSFET管
 詢價
INF
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
INFINEON
20+
TO-247
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
INFINEON/英飛凌
22+
TO-247
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
INFINEON/英飛凌
23+
TO-247
5425
公司只做原裝正品
 詢價
INFINEON/英飛凌
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IPW50R350CP供應商 更新時間2024-12-22 14:00:00

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