首頁 >IIPP50R350CP>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IIPP50R350CP | N-Channel MOSFET Transistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC0)fortargetapplications CoolMOSCPisdesignedfor: ?HardandsoftswitchingSMPStopologies ?CC | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=-10V DESCRIPTION ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC) | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?LowestfigureofmeritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant ?QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisspeciallydesignedfor: ?HardandsoftswitchingSMPSforse | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.35? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: ?Ha | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
N/A |
2023+ |
SOP8 |
50000 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
22+ |
DIP |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
DIP |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP |
7000 |
詢價 | |||
IOR |
23+24 |
SIP |
9860 |
原廠原包裝。終端BOM表可配單??砷_13%增值稅 |
詢價 | ||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
VISHAY |
12+ |
TO-252 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。 |
詢價 | ||
VISHAY/威世 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ST意法 |
20+ |
LGA12 |
17000 |
加速度計,只做全新原裝 |
詢價 |
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