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IPI024N06N3

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI024N06N3G

Marking:024N06N;Package:PG-TO262-3;OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI024N06N3-G

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPP024N06N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP024N06N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP024N06N3G

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP024N06N3-G

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPI024N06N3

  • 功能描述：

    MOSFET N-KANAL POWER MOS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
23+
TO262-3
10000
公司只做原裝正品
 詢價(jià)
INFINEON
23+
TO262-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON
23+
TO262-3
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON
23+
TO262-3
7000
詢價(jià)
INFINEON/英飛凌
22+
TO262-3
92327
詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
INFINEON
22+23+
TO-262-3
33815
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
英飛凌
21+
PG-TO262-3
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
INFINEON/英飛凌
22+
TO-262
20000
保證原裝正品,假一陪十
 詢價(jià)
更多IPI024N06N3供應(yīng)商 更新時(shí)間2025-1-15 14:30:00

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