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IPD09N03LBG

OptiMOS?2 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD09N03LBG

OptiMOS?2 Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF09N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF09N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI09N03LA

OptiMOS2Power-Transistor

Type:IPB09N03LAG Package:PG-TO263-3-2 Marking:09N03LA ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP09N03LA

OptiMOS2Power-Transistor

Type:IPB09N03LAG Package:PG-TO263-3-2 Marking:09N03LA ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU09N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

P09N03BDC

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPD09N03LBG

  • 功能描述:

    MOSFET N-Channel MOSFET 20-200V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
24+
TO252-3
5000
只做原廠渠道 可追溯貨源
詢價(jià)
INFINEON/英飛凌
21+23+
SOT252
7500
16年電子元件現(xiàn)貨供應(yīng)商 終端BOM表可配單提供樣品
詢價(jià)
INFINEON/英飛凌
24+
TO-252
60000
原裝正品進(jìn)口現(xiàn)貨
詢價(jià)
INFINEON
24+
TO252-3
8866
詢價(jià)
Infineon
16+
SOP8
4304
原裝現(xiàn)貨假一罰十
詢價(jià)
INFINEON
2016+
TO252
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價(jià)
INFINEON
2016+
TO252
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
INFINEON
2012+
TO-252
12000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
Infineon
2005
TO252
665
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多IPD09N03LBG供應(yīng)商 更新時(shí)間2024-11-6 16:36:00