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IPD10N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF10N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF10N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPF10N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP10N03L

OptiMOSBuckconverterseries

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP10N03LB

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP10N03LBG

OptiMOS?2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP10N03LBG

OptiMOS2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS10N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS10N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS10N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU10N03LA

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU10N03LA

OptiMOS2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU10N03LAG

OptiMOS?2Power-Transistor

Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KI10N03

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

MMSF10N03Z

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMSF10N03Z

SINGLETMOSPOWERMOSFET10AMPERES30VOLTS

EZFETs?areanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocessandcontainmonolithicback–to–backzenerdiodes.ThesezenerdiodesprovideprotectionagainstESDandunexpectedtransients. ?ZenerProtectedGatesProvideElectrostaticDischargeProtection

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

SDD10N03

DiscreteDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SDD10N03

10AmpereHeatsinkDualTandemPolarityGeneralPurposeRectifierDiodes

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

SSG10N03

Dual-NEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細參數(shù)

  • 型號:

    IPD10N03LA G

  • 功能描述:

    MOSFET N-CH 25V 30A DPAK

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    OptiMOS™

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
2012+
TO-252
12000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價
INFINEON
24+
DPAK(TO-252)
8866
詢價
INFINEON
2016+
TO-252
6523
房間原裝進口現(xiàn)貨假一賠十
詢價
INFINEO
2020+
TO-252
50
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
INFINE0N
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
INFINEON
23+
NA
1640
專做原裝正品,假一罰百!
詢價
INFINEON
24+
TO-252
90000
一級代理商進口原裝現(xiàn)貨、價格合理
詢價
INFINEON
專業(yè)鐵帽
TO-252
389
原裝鐵帽專營,代理渠道量大可訂貨
詢價
Infineon/英飛凌
20+
TO-252
67500
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多IPD10N03LA G供應(yīng)商 更新時間2024-12-29 11:04:00