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IPD65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD65R420CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R420CFD

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPI65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R420CFD

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPP65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R420CFD

650VCoolMOSC6CFDPowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R420CFD

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤420m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IPW65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R420CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SLF65R420SJ

650VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導體有限公司

SLP65R420SJ

650VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導體有限公司

詳細參數(shù)

  • 型號：

    IPB65R420CFDA

  • 制造商：

    Infineon Technologies AG

  • 功能描述：

    Trans MOSFET N-CH 700V 8.7A 3-Pin(2+Tab) TO-263

  • 功能描述：

    COOL MOS - Tape and Reel

  • 功能描述：

    MOSFET N-CH 650V 8.7A TO263

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
TO-263
7000
詢價
Infineon Technologies
21+
D2PAK(TO-263AB)
1000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
Infineon
1931+
N/A
1000
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
INFINEON
1809+
TO-263
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
 詢價
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務
 詢價
Infineon
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
INFINEON
22+
D2PAK
8000
終端可免費供樣,支持BOM配單
 詢價
INFINE0N
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多IPB65R420CFDA供應商 更新時間2025-1-18 15:00:00

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