首頁 >IPX65R420CFD>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPX65R420CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
11A竊?50VN-CHANNELMOSFET | KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司 | KIA | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤420m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VCoolMOSC6CFDPowerTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.42?·Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
只做原裝 |
24+ |
TQFP |
36520 |
一級代理/放心采購 |
詢價 | ||
XILINX/賽靈思 |
23+ |
TQFP |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
xilinx |
23+ |
TQFP |
8000 |
全新原裝 |
詢價 | ||
XFMRS |
23+ |
原廠封裝 |
9980 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
NEWINORIGINAL |
24+ |
DO-214 |
7300 |
新進庫存/原裝 |
詢價 | ||
JAT |
1923+ |
SMB |
35689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
JAT |
23+ |
SMB |
21580 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
N/A |
2023+環(huán)?，F(xiàn)貨 |
SMB |
1500 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 | ||
DO-214 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
xilinx |
22+ |
NULL |
6800 |
詢價 |
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