首頁 >IPB60R165CPXT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤165m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: ?Hards | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMosPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-263(D2PAK)packaging ?Ultra-fastbodydiode ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?PFCstages,hardswit | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingtopologiesforServer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: ?HardswitchingtopologiesforServerandTelec | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingtopologiesforServer | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.165? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤165m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
CoolMOS?PowerTransistorFeaturesLowestfigure-of-meritRONxQgUltralowgatecharge | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor CoolMOS?PowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswit | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
IPB60R165CPXT
- 制造商:
Infineon Technologies AG
- 功能描述:
MOSFET N-CH 650V 21A D2PAK
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
N/A |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
N/A |
7000 |
詢價 | |||
英飛凌 |
21+ |
PG-TO263-3 |
6000 |
絕對原裝現(xiàn)貨 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
PG-TO263-3 |
115000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
8800 |
公司只作原裝正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
10000 |
原裝,品質保證,請來電咨詢 |
詢價 | ||
Infineon/英飛凌 |
2021+ |
PG-TO263-3 |
9600 |
原裝現(xiàn)貨,歡迎詢價 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
PG-TO263-3 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO263-3 |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 |
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