首頁 >IPB60R125CPXT>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤125m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMosPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?WorldwidebestRDS,oninTO220Fullpak ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?HardswitchingSMPStopolog | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.125? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤125m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號:
IPB60R125CPXT
- 制造商:
Infineon Technologies
- 功能描述:
Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | |||
INFINEON |
23+ |
7000 |
詢價(jià) | ||||
INFIEON |
23+ |
TO266 |
6500 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
英飛凌 |
21+ |
PG-TO263-3 |
6000 |
絕對原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
PG-TO263-3 |
115000 |
1000個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價(jià) | ||
INFINEON |
23+ |
PG-TO263-3 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO263 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
INFINEON |
22+ |
TO-263 |
11000 |
市場最低 原裝現(xiàn)貨 假一罰百 可開原型號 |
詢價(jià) | ||
INFINEON |
2023 |
NA |
2580 |
原廠代理渠道,正品保障 |
詢價(jià) | ||
Infineon |
23+ |
10000 |
原裝正品現(xiàn)貨,德為本,正為先,通天下! |
詢價(jià) |
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