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IPB011N04L

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04LG

OptiMOS3PowerTransistor

Features ?MOSFETforORingandUninterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Logiclevel ?Ultra-lowon-resistanceRDS(on) ?100Avalanchetested ?pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB011N04NG

OptiMOS3Power-Transistor

Features ?MOSFETforORingandUniterruptiblePowerSupply ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel ?Normallevel ?Ultra-lowon-resistanceRDS(on) ?Avalancherated ?Pb-freeplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMYS011N04C

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NTMYS011N04CTWG

PowerMOSFET40V,12m,35A,SingleN??hannel

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVLJWS011N04CL

MOSFET??Power,SingleN-Channel40V,11m,37A

Features ?SmallFootprintforCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMYS011N04C

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NVMYS011N04CTWG

MOSFET–Power,SingleN-Channel40V,12m,35A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號：

    IPB011N04N G

  • 功能描述：

    MOSFET OptiMOS 3 PWR TRANS 40V 180A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
PG-TO263-3
14253
原包裝原標現(xiàn)貨,假一罰十,
 詢價
Infineon(英飛凌)
23+
TO263
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
 詢價
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
Infineon
24+
PG-TO263-3
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
Infineon Technologies
23+/22+
783
原裝進口訂貨7-10個工作日
 詢價
INFINEON
200
詢價
INFINEON
24+
con
135
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index
 詢價
INFINEON
2333+
3135
只做原裝正品,支持實單
 詢價
INFINEON
24+
D2PAK7pin(TO-2637
8866
詢價
INFINEON
SOT263
17432
提供BOM表配單只做原裝貨值得信賴
 詢價
更多IPB011N04N G供應商 更新時間2024-12-23 10:01:00

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