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ILB03N60

LightMOS Power Transistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILD03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILP03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MJU03N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    ILB03N60

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
MAX
23+
DIP28
6500
全新原裝假一賠十
 詢價
INF
22+
NA
27003
全新原裝正品現(xiàn)貨
 詢價
INFINEON
22+
TO-263
8000
終端可免費供樣,支持BOM配單
 詢價
INFINEON
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
INFINEON/英飛凌
1000
原裝現(xiàn)貨
 詢價
INFINEON
23+
TO-263
7000
詢價
DALE
新
1000
全新原裝 貨期兩周
 詢價
VISHAY/威世
23+
SMD
6800
專注配單,只做原裝進口現(xiàn)貨
 詢價
DALE
23+
65480
詢價
更多ILB03N60供應(yīng)商 更新時間2025-3-29 9:02:00

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