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ILD03N60

LightMOS Power Transistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILP03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MJU03N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF03N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    ILD03N60

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

  • 制造商：

    Infineon Technologies AG

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INFINEON
24+
TO-252
1146
詢價(jià)
INFINEON
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
infineon
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
infineon
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
infineon
24+
TO-252
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
INFINEON/英飛凌
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Infineon
21+
TO252
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON
22+
TO-252
6000
十年配單,只做原裝
 詢價(jià)
INFINEON
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多ILD03N60供應(yīng)商 更新時(shí)間2025-3-30 16:30:00

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