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首頁(yè) >IIRL1404>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IIRL1404	文件：339.15 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRF1404	文件：107.46 Kbytes Page：8 Pages	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF1404	文件：2.99281 Mbytes Page：8 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404	文件：139.55 Kbytes Page：2 Pages	iscN-ChannelMosfetTransistor Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRF1404L	文件：306.92 Kbytes Page：10 Pages	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp	IRF International Rectifier	IRF
IRF1404L	文件：1.19651 Mbytes Page：10 Pages	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404LPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier	IRF
IRF1404LPbF	文件：279.7 Kbytes Page：11 Pages	HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat	IRF International Rectifier	IRF
IRF1404LPBF	文件：3.89112 Mbytes Page：10 Pages	HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404LPBF	文件：279.7 Kbytes Page：11 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF1404PBF	文件：201.83 Kbytes Page：10 Pages	HEXFET?PowerMOSFET Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk	IRF International Rectifier	IRF
IRF1404PBF	文件：3.45272 Mbytes Page：9 Pages	AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404PBF	文件：214.2 Kbytes Page：9 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF1404S	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier	IRF
IRF1404S	文件：306.92 Kbytes Page：10 Pages	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp	IRF International Rectifier	IRF
IRF1404S	文件：1.19651 Mbytes Page：10 Pages	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404S	文件：263.14 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRF1404SPBF	文件：279.7 Kbytes Page：11 Pages	HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat	IRF International Rectifier	IRF
IRF1404SPBF	文件：3.89112 Mbytes Page：10 Pages	HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF1404SPBF	文件：279.7 Kbytes Page：11 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IIRL3713S	IR	22+	TO-252	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IIRL3713S	IR	23+	TO-252	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IIRL3713S	IR	23+	TO-252	7000		詢價(jià)
深圳市永貝爾科技有限公司	IIRLR3105	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市喜鵲微科技有限公司	IIS2DH	ST意法	20+	LGA12	17000	加速度計(jì),只做全新原裝	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IIS2DH	ST/意法	23+	VFLGA-12221	3000	一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價(jià)
深圳市星佑電子有限公司	IIS2DH	ST	22+	VFLGA-12221	16900	支持樣品原裝現(xiàn)貨提供技術(shù)支持!	詢價(jià)
深圳市德力誠(chéng)信科技有限公司	IIS2DH	STMICROELECTRONICS	24+	con	35960	查現(xiàn)貨到京北通宇商城	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	IIS2DHTR	ST	24+	SMD	17900	加速計(jì)	詢價(jià)
深圳市達(dá)恩科技有限公司	IIS2DHTR	STMicroelectronics	18+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)

更多IIRL1404供應(yīng)商更新時(shí)間2024-12-22 14:00:00

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