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IIPW60R190E6

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R190E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?E6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R190E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA60R190E6

600VCoolMOS?E6PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R190E6

600VCoolMOS?E6PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190E6

600VCoolMOS?E6PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190E6

600VCoolMOS?E6PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190E6

N-ChannelMOSFETTransistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP60R190E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?E6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R190E6

600VCoolMOSE6PowerTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?E6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
DIP
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
DIP
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
DIP
7000
詢(xún)價(jià)
IOR
23+24
SIP
9860
原廠原包裝。終端BOM表可配單?？砷_(kāi)13%增值稅
 詢(xún)價(jià)
INFINEON
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢(xún)價(jià)
VISHAY
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢(xún)價(jià)
VISHAY/威世
21+
TO-252
30000
只做正品原裝現(xiàn)貨
 詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IFM
23+
SENSOR
128
全新、原裝
 詢(xún)價(jià)
ST意法
20+
LGA12
17000
加速度計(jì),只做全新原裝
 詢(xún)價(jià)
更多IIPW60R190E6供應(yīng)商 更新時(shí)間2025-2-14 10:00:00

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