IF-540

包裝：管件 類別：光電器件 光纖 -開關(guān) ，交換機，多路復(fù)用器，解復(fù)用器 描述：PLAST OPT FIBER COUPLER 50 TO 50

Industrial Fiber Optics

IIRF540N

N-ChannelMOSFETTransistor

IIRF540Z

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.0265? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableopera

IIRFR540Z

N-ChannelMOSFETTransistor

IIRL540N

N-ChannelMOSFETTransistor

?DESCRITION ?Itisintendedforgeneralpurposeswitchingapplications ?FEATURES ?Lowdrain-sourceon-resistance: RDS(on)≤44m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper

IIRL540N

iscN-ChannelMOSFETTransistor

IK-540A

ToshibaIK-540ACamera

Forhigh-resolutionimaginginchallenginglightingconditions,thereisonlyonechoice:TheToshibaIK-540A. Thisamazingcameradeliverstheabsolutebestimagingperformanceinlowlight.Howgood?ItisdocumentedtobeuptoTENTIMESaspowerfulinlowlightthanconventionalmonochromeca

IQXO-540

CrystalClockOscillatorSpecification

IQXO-540-AUTO

CrystalClockOscillatorSpecification

IRC540

PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRC540PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

IRF540

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

IRF540

N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

IRF540

HEXFETPOWERMOSFET

ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature

IRF540

N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET

IRF540

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF540

N-ChannelPowerMOSFET

ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop

IRF540

N-ChannelPowerMOSFETs,27A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF540

PowerMOSFET