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IRF540中文資料尼爾半導體數(shù)據(jù)手冊PDF規(guī)格書

IRF540
廠商型號

IRF540

功能描述

N-Channel Power MOSFET

文件大小

338.15 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Nell Semiconductor Co., Ltd
企業(yè)簡稱

NELLSEMI尼爾半導體

中文名稱

尼爾半導體股份有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-23 20:18:00

IRF540規(guī)格書詳情

ID (A) 28

VDSS (V) 100

RDS(ON) (Ω) 0.077 @ VGS = 10V

QG(nC) max. 72

DESCRIPTION

The Nell IRF540 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors,UPS, switching mode power supplies and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits.

FEATURES

● Low reverse transfer capacitance (CRSS = 120pF typical)

● RDS(ON) = 0.077? @ VGS = 10V

● Ultra low gate charge(72nC Max.)

● Fast switching capability

● 100 avalanche energy specified

● Improved dv/dt capability

● 175°C operation temperature

產(chǎn)品屬性

  • 型號:

    IRF540

  • 功能描述:

    MOSFET N-Chan 100V 28 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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公司優(yōu)勢庫存 熱賣中!
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