首頁(yè) >IDT71V67703S80BQGI>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT | ||
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號(hào):
IDT71V67703S80BQGI
- 功能描述:
IC SRAM 9MBIT 80NS 165FBGA
- RoHS:
是
- 類別:
集成電路(IC) >> 存儲(chǔ)器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
72
- 系列:
- 格式 -
- 存儲(chǔ)器:
RAM
- 存儲(chǔ)器類型:
SRAM - 同步
- 存儲(chǔ)容量:
9M(256K x 36)
- 速度:
75ns
- 接口:
并聯(lián)
- 電源電壓:
3.135 V ~ 3.465 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
100-LQFP
- 供應(yīng)商設(shè)備封裝:
100-TQFP(14x14)
- 包裝:
托盤
- 其它名稱:
71V67703S75PFGI
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
165-CABGA(13x15) |
1650 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IDT |
24+ |
165-FBGA |
6108 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IDT |
21+ |
165CABGA (13x15) |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IDT |
23+ |
100TQFP |
9526 |
詢價(jià) | |||
IDT-INTE |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價(jià)優(yōu) |
詢價(jià) | ||
IDT |
2021+ |
1931 |
只做原裝假一罰十 |
詢價(jià) | |||
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) |
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