首頁 >IDT71V256SA15Y>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V256SA15Y | LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) DESCRIPTION TheIDT71V256SAisa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. FEATURES ?Idealforhigh-performanceprocessorsecondarycache ?Commercial(0°to70°C)andIndustrial(-40°to85°C) | IDT Integrated Device Technology, Inc. | IDT | |
IDT71V256SA15Y | 包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) DESCRIPTION TheIDT71V256SAisa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. FEATURES ?Idealforhigh-performanceprocessorsecondarycache ?Commercial(0°to70°C)andIndustrial(-40°to85°C) | IDT Integrated Device Technology, Inc. | IDT | ||
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) | IDT Integrated Device Technology, Inc. | IDT | ||
Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit) | IDT Integrated Device Technology, Inc. | IDT | ||
包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
包裝:卷帶(TR) 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 256KBIT PARALLEL 28SOJ | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
LowerPower3.3VCMOSFastSRAM256K(32Kx8-Bit) Features ◆Idealforhigh-performanceprocessorsecondarycache ◆Commercial(0°Cto+70°C)andIndustrial(–40°Cto+85°C) temperaturerangeoptions ◆Fastaccesstimes: –CommercialandIndustrial:12/15/20ns ◆Lowstandbycurrent(maximum): –2mAfullstandby ◆Smallpackagesforspace- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowerPower3.3VCMOSFastSRAM256K(32Kx8-Bit) Features ◆Idealforhigh-performanceprocessorsecondarycache ◆Commercial(0°Cto+70°C)andIndustrial(–40°Cto+85°C) temperaturerangeoptions ◆Fastaccesstimes: –CommercialandIndustrial:12/15/20ns ◆Lowstandbycurrent(maximum): –2mAfullstandby ◆Smallpackagesforspace- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowerPower3.3VCMOSFastSRAM256K(32Kx8-Bit) Features ◆Idealforhigh-performanceprocessorsecondarycache ◆Commercial(0°Cto+70°C)andIndustrial(–40°Cto+85°C) temperaturerangeoptions ◆Fastaccesstimes: –CommercialandIndustrial:12/15/20ns ◆Lowstandbycurrent(maximum): –2mAfullstandby ◆Smallpackagesforspace- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowerPower3.3VCMOSFastSRAM256K(32Kx8-Bit) Features ◆Idealforhigh-performanceprocessorsecondarycache ◆Commercial(0°Cto+70°C)andIndustrial(–40°Cto+85°C) temperaturerangeoptions ◆Fastaccesstimes: –CommercialandIndustrial:12/15/20ns ◆Lowstandbycurrent(maximum): –2mAfullstandby ◆Smallpackagesforspace- | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
LowerPower3.3VCMOSFastSRAM | IDT Integrated Device Technology, Inc. | IDT | ||
LowerPower3.3VCMOSFastSRAM | IDT Integrated Device Technology, Inc. | IDT | ||
LOWPOWER3.3VCMOSFASTSRAM256K(32Kx8-BIT) DESCRIPTION TheIDT71V256SAisa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. FEATURES ?Idealforhigh-performanceprocessorsecondarycache ?Commercial(0°to70°C)andIndustrial(-40°to85°C) | IDT Integrated Device Technology, Inc. | IDT | ||
LOWPOWER3.3VCMOSFASTSRAM256K(32Kx8-BIT) DESCRIPTION TheIDT71V256SAisa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. FEATURES ?Idealforhigh-performanceprocessorsecondarycache ?Commercial(0°to70°C)andIndustrial(-40°to85°C) | IDT Integrated Device Technology, Inc. | IDT | ||
LOWPOWER3.3VCMOSFASTSRAM256K(32Kx8-BIT) DESCRIPTION TheIDT71V256SAisa262,144-bithigh-speedstaticRAMorganizedas32Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. FEATURES ?Idealforhigh-performanceprocessorsecondarycache ?Commercial(0°to70°C)andIndustrial(-40°to85°C) | IDT Integrated Device Technology, Inc. | IDT |
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT71V256SA15Y
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 異步
- 存儲容量:
256Kb(32K x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
15ns
- 電壓 - 供電:
3V ~ 3.6V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
28-BSOJ(0.300",7.62mm 寬)
- 供應商器件封裝:
28-SOJ
- 描述:
IC SRAM 256KBIT PARALLEL 28SOJ
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
24+ |
SOJ28 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
IDT |
21+ |
SOJ28 |
50000 |
原裝現(xiàn)貨/假一賠十/支持第三方檢驗 |
詢價 | ||
IDT |
2023+ |
SOJ |
3783 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
23+ |
SOJ28 |
19965 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
IDT |
2020+ |
SOJ28 |
18600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IDT |
2020+ |
SOP |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IDT |
490 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
IDT |
23+ |
28-SOJ |
36430 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT |
SOJ32 |
1525 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | |||
24+ |
SOJ |
58 |
詢價 |
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