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71V124SA12PHG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA12PHGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA12TYG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA12TYGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA12YG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA12YGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA12

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12PH

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12PHI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12TY

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12TYI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12Y

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA12YI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號：

    IDT71V124SA12PHGI

  • 功能描述：

    IC SRAM 1MBIT 12NS 32TSOP

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    72

  • 系列：

    - 格式 -

  • 存儲器：

    RAM

  • 存儲器類型：

    SRAM - 同步

  • 存儲容量：

    4.5M（256K x 18）

  • 速度：

    133MHz

  • 接口：

    并聯(lián)

  • 電源電壓：

    3.135 V ~ 3.465 V

  • 工作溫度：

    0°C ~ 70°C

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商設(shè)備封裝：

    100-TQFP（14x20）

  • 包裝：

    托盤

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
2021+
TSOP-32
9450
原裝現(xiàn)貨。
 詢價
IDT
23+
32-TSOPII
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IDT
24+
32TSOP
4191
原裝現(xiàn)貨
 詢價
IDT
22+
32TSOP II
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
32TSOP II
13880
公司只售原裝,支持實(shí)單
 詢價
IDT
23+
32TSOP II
9000
原裝正品，支持實(shí)單
 詢價
IDT
11+
TSOP
170
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IDT
2403+
TSOP
11809
原裝現(xiàn)貨!歡迎隨時咨詢!
 詢價
IDT
23+
TSOP
170
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IDT71V124SA12PHGI供應(yīng)商 更新時間2024-12-30 16:05:00

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