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首頁(yè) >IDT71V124SA12>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IDT71V124SA12	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PH	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PHI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TY	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12TYI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12Y	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12YI	文件：81.33 Kbytes Page：8 Pages	3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDT Integrated Device Technology, Inc.	IDT
IDT71V124SA12PH8	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：32-SOIC（0.400"，10.16mm 寬）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 1MBIT PARALLEL 32TSOP II	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V124SA12PHI	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：32-SOIC（0.400"，10.16mm 寬）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 1MBIT PARALLEL 32TSOP II	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
IDT71V124SA12PHI8	文件：100 bytes Page：1 Pages	包裝：管件封裝/外殼：32-SOIC（0.400"，10.16mm 寬）類(lèi)別：集成電路（IC）存儲(chǔ)器描述：IC SRAM 1MBIT PARALLEL 32TSOP II	Renesas Electronics America Inc Renesas Electronics America Inc	Renesas Electronics America Inc
71V124SA12PHG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12PHGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12TYG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12TYGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12YG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V124SA12YGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

詳細(xì)參數(shù)

型號(hào)：
IDT71V124SA12
功能描述：
IC SRAM 1MBIT 12NS 32TSOP
RoHS：
否
類(lèi)別：
集成電路(IC) >> 存儲(chǔ)器
系列：
-
產(chǎn)品變化通告：
Product Discontinuation 05/Nov/2008
標(biāo)準(zhǔn)包裝：
84
系列：
- 格式 -
存儲(chǔ)器：
RAM
存儲(chǔ)器類(lèi)型：
SRAM - 同步 ZBT
存儲(chǔ)容量：
4.5M（128K x 36）
速度：
75ns
接口：
并聯(lián)
電源電壓：
3.135 V ~ 3.465 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
119-BGA
供應(yīng)商設(shè)備封裝：
119-PBGA（14x22）
包裝：
托盤(pán)
其它名稱：
71V3557SA75BGI

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市永貝爾科技有限公司	IDT71V124SA12	IDT	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IDT71V124SA12Y	IDT	24+	SOJ	600		詢價(jià)
深圳市益百分電子有限公司	IDT71V124SA12TY	IDT	SOJ32		6	全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)	詢價(jià)
深圳市勤思達(dá)科技有限公司	IDT71V124SA12TY	IDT	1430+	SOJ	5800	全新原裝,公司大量現(xiàn)貨供應(yīng),絕對(duì)正品	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IDT71V124SA12TYG	IDT	2016+	SOJ	6528	只做進(jìn)口原裝現(xiàn)貨!假一賠十!	詢價(jià)
深圳市福安甌科技有限公司	IDT71V124SA12TY	IDT	22+	SOJ32	1000	⊙⊙新加坡大量現(xiàn)貨庫(kù)存,深圳常備現(xiàn)貨!歡迎查詢!⊙	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V124SA12TYG	IDT	23+	32-SOJ	71890	專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!	詢價(jià)
深圳市利加科技有限公司	IDT71V124SA12Y	IDT	16+	SOJ32	8800	進(jìn)口原裝大量現(xiàn)貨熱賣(mài)中	詢價(jià)
深圳市星佑電子有限公司	IDT71V124SA12Y	IDT	05+	原廠原裝	4611	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市佳鑫美電子科技有限公司	IDT71V124SA12TY	IDT	24+	SOJ32	2560	絕對(duì)原裝!現(xiàn)貨熱賣(mài)!	詢價(jià)

更多IDT71V124SA12供應(yīng)商更新時(shí)間2025-1-2 13:59:00

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