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7164L20DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20DGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20TDGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20TPGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20YGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT7164L20D

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20DB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20P

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20PB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TD

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TDB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TP

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TPB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20Y

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20YB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號:

    IDT7164L20TPG

  • 功能描述:

    IC SRAM 64KBIT 20NS 28DIP

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    72

  • 系列:

    - 格式 -

  • 存儲器:

    RAM

  • 存儲器類型:

    SRAM - 同步

  • 存儲容量:

    4.5M(256K x 18)

  • 速度:

    133MHz

  • 接口:

    并聯(lián)

  • 電源電壓:

    3.135 V ~ 3.465 V

  • 工作溫度:

    0°C ~ 70°C

  • 封裝/外殼:

    100-LQFP

  • 供應(yīng)商設(shè)備封裝:

    100-TQFP(14x20)

  • 包裝:

    托盤

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
28-PDIP
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
24+
28DIP
5855
原裝現(xiàn)貨
詢價
IDT
22+
28PDIP
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
28PDIP
13880
公司只售原裝,支持實單
詢價
IDT
23+
28PDIP
9000
原裝正品,支持實單
詢價
IDT
PDIP28
100
專營鐵帽CANCDIP
詢價
IDT
24+
65200
詢價
IDT
21+
DIP
10000
原裝現(xiàn)貨假一罰十
詢價
IDT
24+
DIP
60
原裝現(xiàn)貨假一賠十
詢價
IDT
DIP
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
詢價
更多IDT7164L20TPG供應(yīng)商 更新時間2025-1-5 10:50:00