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ICE22N60W

N-Channel Enhancement Mode MOSFET

MICROSS

Micross Components

ICE22N60W

N-Channel Enhancement Mode MOSFET

ICEMOS

Icemos Technology

IRF22N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRFP22N60K

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.28?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP22N60K

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60K

SMPSMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IRFP22N60K

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EnhancedbodydiodedV/dtcapability ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60KPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60KPBF

HEXFETPowerMOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IXFC22N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    ICE22N60W

  • 制造商：

    ICEMOS

  • 制造商全稱：

    ICEMOS

  • 功能描述：

    N-Channel Enhancement Mode MOSFET

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5000
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ICE
23+
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4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
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ICE
23+
TSSOP
10845
全新原裝現(xiàn)貨
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ICE
20+
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2960
誠信交易大量庫存現(xiàn)貨
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ICE
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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ICE
21+
TSSOP
10000
原裝現(xiàn)貨假一罰十
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ICE
2022
TSSOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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ICE
TSSOP
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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ICE
23+
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4000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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ICE
2025+
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3565
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
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更多ICE22N60W供應(yīng)商 更新時(shí)間2025-2-28 13:00:00

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