首頁 >I310S CAL>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
RobustDin-railFanlessEmbeddedSystemwithIntelCeleron | AXIOMTEKAxiomtek Co., Ltd. 艾訊科技艾訊股份有限公司 | AXIOMTEK | ||
INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/° | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/° | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/° | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x-Q1AEC-Q100,–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:?40°Cto+125°C,TA ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vt | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
INA310x–4Vto110V,1.3MHz,Ultra-PreciseCurrentSenseAmplifierWithOpen-DrainComparatorandReference 1Features ?Widecommon-modevoltage: –Operationalvoltage:?4Vto+110V –Survivalvoltage:?20Vto+120V ?Highsignalbandwidth:1.3MHz ?Slewrate:2.5V/μs ?ExcellentCMRR:160dB ?Accuracy –Gainerror(maximum) ?VersionA:0.15,10ppm/°Cdrift ?VersionB:0.5,20ppm/° | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
0.4A,400V,3.600Ohm,N-ChannelPowerMOSFET Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=400V,Rds(on)=3.6ohm,Id=0.35A) VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFET?PowerMOSFET VDSS=400V RDS(on)=3.6? ID=0.35A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETTRANSISTOR 400Volt,3.6?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpacka | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET 1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs | Intersil Intersil Corporation | Intersil | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSTHRU-HOLE(TO-205AF) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB |
詳細參數(shù)
- 型號：
I310S CAL
- 制造商：
Fluke Electronics
- 功能描述：
CALIBRATED - AC/DC CURRENT CLAMP
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INTEL/英特爾 |
2022+ |
原廠封裝 |
95000 |
100%進口原裝正品現(xiàn)貨,公司原裝現(xiàn)貨眾多歡迎加微信咨 |
詢價 | ||
INTEL |
22+ |
NA |
18560 |
原裝正品支持實單 |
詢價 | ||
INTERSIL |
01/02+ |
SMD8 |
3678 |
全新原裝100真實現(xiàn)貨供應 |
詢價 | ||
INTERSIL |
22+ |
SMD8 |
5600 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價 | ||
INTERSIL |
24+ |
SMD8 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
Lattice |
2023+環(huán)?，F(xiàn)貨 |
標準封裝 |
2500 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務 |
詢價 | ||
TDK/東電化 |
C3225Jb1A335KT0J0N4K |
100000 |
全新原裝現(xiàn)貨 樣品可售 |
詢價 | |||
HARRIS/哈里斯 |
23+ |
DIP |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
HARRIS/哈里斯 |
23+ |
85 |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HARRIS/哈里斯 |
23+ |
6500 |
85 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
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