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HY57V561620BT-PI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620BT-SI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620C

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLT-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLT-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLT-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLTP-H

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLTP-K

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLTP-P

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

HY57V561620CLTP-S

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半導體

詳細參數

  • 型號:

    HY57V561620BT-PI

  • 制造商:

    HYNIX

  • 制造商全稱:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 4M x 16Bit Synchronous DRAM

供應商型號品牌批號封裝庫存備注價格
HYNIX
18+
TSOP-54
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
N/A
23+
80000
專注配單,只做原裝進口現貨
詢價
N/A
23+
80000
專注配單,只做原裝進口現貨
詢價
HYUNDAI
23+
TSOP
5800
特價庫存
詢價
hy
23+
tssop
5000
原裝正品,假一罰十
詢價
TI
23+
SOP
6500
全新原裝假一賠十
詢價
HYUNDAI
24+
TSOP
8
詢價
HYNIX
6200
TSOP
17
100%原裝正品現貨
詢價
HY
TSOP54
630
正品原裝--自家現貨-實單可談
詢價
HYX
24+
TSOP
26880
原裝現貨假一罰十
詢價
更多HY57V561620BT-PI供應商 更新時間2025-5-1 15:14:00