| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AdvancedPowerMOSFET Features ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175OperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack | FS First Silicon Co., Ltd | FS | ||
N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack | FS First Silicon Co., Ltd | FS | ||
N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET(100V/27A) GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack | FS First Silicon Co., Ltd | FS | ||
33A,100V,0.040Ohm,N-ChannelPowerMOSFET Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產廠家：
- 制作材料：
- 性質：
射頻/高頻放大 （HF）_寬頻帶放大 （A）
- 封裝形式：
直插封裝
- 極限工作電壓：
160V
- 最大電流允許值：
0.6A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-11
- vtest：
160
- htest：
999900
- atest：
0.6
- wtest：
0.625
詳細參數(shù)
- 型號：
HY540
- 制造商：
Vishay Sprague
- 功能描述：
CAPACITOR, CERAMIC DISC, 25 V, Y5S, 0.068 UF, THROUGH HOLE MOUNT
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
75000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
HYNIX/海力士 |
23+ |
FBGA |
10000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
YUEQING HONGYU ELECTRONICS CO, |
兩年內 |
NA |
53 |
實單價格可談 |
詢價 | ||
OTHER/其它 |
21+ |
原廠原封 |
5000 |
全新原裝 現(xiàn)貨 價優(yōu) |
詢價 | ||
華羿微 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
HOOYI |
2022+ |
TO-247 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
華裔 |
21+ |
TO-247-3L |
7540 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
華羿微 |
22+ |
TO-247 |
50000 |
只做原裝假一罰十,歡迎咨詢 |
詢價 | ||
華羿微 |
24+ |
NA/ |
10 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
HOOYI |
23+ |
TO-247 |
6800 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 |
