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HY1N60D

600V / 1.0A N-Channel Enhancement Mode MOSFET

HY

HY ELECTRONIC CORP.

HY1N60M

600V/1.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRFR1N60A

PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A)

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60A

SMPSMOSFET

IRF

International Rectifier

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

IRFR1N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=7?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60APBF

SMPSMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATR

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATRLPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFR1N60ATRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

IRFU1N60A

SMPSMOSFET

IRF

International Rectifier

IRFU1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    HY1N60D

  • 制造商:

    HY

  • 制造商全稱:

    HY ELECTRONIC CORP.

  • 功能描述:

    600V/1.0A N-Channel Enhancement Mode MOSFET

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更多HY1N60D供應商 更新時間2024-11-16 16:18:00