零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY1N60D | 600V / 1.0A N-Channel Enhancement Mode MOSFET | HY HY ELECTRONIC CORP. | HY | |
600V/1.0AN-ChannelEnhancementModeMOSFET | HY HY ELECTRONIC CORP. | HY | ||
PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A) Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?PowerFactorCorrecti | IRF International Rectifier | IRF | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup | LUCKY-LIGHT Lucky Light Electronic | LUCKY-LIGHT | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=7?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SMPSMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
HY1N60D
- 制造商:
HY
- 制造商全稱:
HY ELECTRONIC CORP.
- 功能描述:
600V/1.0A N-Channel Enhancement Mode MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PanasonicElectricWorks |
2022 |
RELAYNON-POL1A1.5V200MWP |
3268 |
原廠原裝正品,價格超越代理 |
詢價 | ||
松下 |
1736+ |
RELAY |
8529 |
專營繼電器只做原裝正品假一賠十! |
詢價 | ||
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
PANASONIC |
23+ |
DIP |
9365 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
PANASON |
2020+ |
DIP6 |
40 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
NAIS |
23+ |
DIP6 |
50 |
原裝環(huán)保房間現(xiàn)貨假一賠十 |
詢價 | ||
NAIS |
1123+ |
DIP6 |
50 |
剛到現(xiàn)貨加微13425146986 |
詢價 | ||
PANASONIC |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
PANASONIC |
20+ |
DIP通信繼電器 |
2890 |
只做原裝現(xiàn)貨繼電器 |
詢價 | ||
松下 |
2023+ |
DIP |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 |
相關規(guī)格書
更多- HY1Z1,5J
- HY1Z12J
- HY1Z-12V
- HY1Z-24V
- HY1Z-4.5V
- HY2000
- HY2002
- HY2004
- HY2006
- HY202XX01
- HY20-P
- HY2262
- HY22-73LF
- HY229F800BG-12
- HY229F800BG-55
- HY229F800BG-70
- HY23V16202M
- HY23V16202T
- HY2440-F
- HY25-P/SP1
- HY2717
- HY27C64D20
- HY27C64P15
- HY27C64P30
- HY27LF081G2M-TCP
- HY27LF081G2M-TEB
- HY27LF081G2M-TES
- HY27LF081G2M-TIP
- HY27LF081G2M-TMB
- HY27LF081G2M-TMS
- HY27LF081G2M-TPCP
- HY27LF081G2M-TPEB
- HY27LF081G2M-TPES
- HY27LF081G2M-TPIP
- HY27LF081G2M-TPMB
- HY27LF081G2M-TPMS
- HY27LF081G2M-VCP
- HY27LF081G2M-VEB
- HY27LF081G2M-VES
- HY27LF081G2M-VIP
- HY27LF081G2M-VMB
- HY27LF081G2M-VMS
- HY27LF081G2M-VPCP
- HY27LF081G2M-VPEB
- HY27LF081G2M-VPES
相關庫存
更多- HY1Z-1.5V
- HY1Z12V
- HY1Z24J
- HY1Z-3V
- HY1Z45J
- HY2001
- HY2003
- HY2005
- HY2007
- HY204XX01
- HY20-P/SP1
- HY22-73
- HY22-73LF-B
- HY229F800BG-12I
- HY229F800BG-55I
- HY229F800BG-70I
- HY23V16202S
- HY242XX01
- HY25-P
- HY26
- HY27C64D15
- HY27C64D30
- HY27C64P20
- HY27LF081G2M-TCB
- HY27LF081G2M-TCS
- HY27LF081G2M-TEP
- HY27LF081G2M-TIB
- HY27LF081G2M-TIS
- HY27LF081G2M-TMP
- HY27LF081G2M-TPCB
- HY27LF081G2M-TPCS
- HY27LF081G2M-TPEP
- HY27LF081G2M-TPIB
- HY27LF081G2M-TPIS
- HY27LF081G2M-TPMP
- HY27LF081G2M-VCB
- HY27LF081G2M-VCS
- HY27LF081G2M-VEP
- HY27LF081G2M-VIB
- HY27LF081G2M-VIS
- HY27LF081G2M-VMP
- HY27LF081G2M-VPCB
- HY27LF081G2M-VPCS
- HY27LF081G2M-VPEP
- HY27LF081G2M-VPIB