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HV9110P

High-Voltage Current-Mode PWM Controller

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

HV9110PJ

High-Voltage Current-Mode PWM Controller

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

HV9110X

High-VoltageCurrent-ModePWMController

GeneralDescription TheSupertexHV9110throughHV9113areaseriesofBiCMOS/DMOSsingle-output,pulsewidthmodulatorICsintendedforuseinhigh-speedhigh-efficiencyswitchmodepowersupplies.Theyprovideallthefunctionsnecessarytoimplementasingle-switchcurrent-modePWM,inanyto

SUTEX

Supertex, Inc

IRFD9110

1-WATTRATEDPOWERMOSFETs

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

-0.6Aand-0.7A,-80Vand-100V,1.2and1.6Ohm,P-ChannelPowerMOSFETs

Description TheseareP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Features ?-0.6Aand-07A,-80Vand-100V ?rDS(ON)=

HARRIS

Harris Corporation

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD9110

0.7A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFD9110

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-0.70A)

HEXFETtechnologyisthekeytoInternationalRectififersadvancedlineofpowerMOSFETtransistors. ■P-ChannelVersatility ■ForAutomaticInsertion ■CompactPlasticPackage ■EndStackable ■FastSwitching ■LowDriveCurrent ■EasilyParalleled ■ExcellentTemperatureStability

IRF

International Rectifier

IRFD9110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?P-channel ?Fastswitching ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110PBF

HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-0.70A)

IRF

International Rectifier

IRFD9110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD9110PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9110

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9110

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

IRF

International Rectifier

IRFE9110

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9110

SimpleDriveRequirements

IRF

International Rectifier

IRFF9110

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalso

IRF

International Rectifier

IRFF9110

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號(hào)：

    HV9110P

  • 功能描述：

    開關(guān)變換器、穩(wěn)壓器與控制器 HVCMOS 120V 1% REF

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 輸出電壓：

    1.2 V to 10 V

  • 輸出電流：

    300 mA

  • 輸入電壓：

    3 V to 17 V

  • 開關(guān)頻率：

    1 MHz

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    WSON-8

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SUPERTEX超科
1626+
DIP14
3215
代理品牌
 詢價(jià)
Supertex
24+
原廠封裝
3451
原裝現(xiàn)貨
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MICROCHIP/微芯
24+
SMT
18000
誠以養(yǎng)德,用芯做事,全新原裝原盒原標(biāo)出貨。
 詢價(jià)
05+
原廠原裝
4361
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
SUPERTE
1735+
SOIC
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價(jià)
NULL
2021+
SOP
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
SUPERTEX
21+
SOP3.9
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SUPERTEX
SOP3.9
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
更多HV9110P供應(yīng)商 更新時(shí)間2024-11-6 10:04:00

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