HS9-303RH-Q中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

The HS-303RH analog switch is a monolithic device fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). This switch offers low resistance switching performance for analog voltages up to the supply rails. “ON” resistance is low and stays reasonably constant over the full range of operating voltage and current. “ON” resistance also stays reasonably constant when exposed to radiation, being typically 30? pre-rad and 35? post 100kRAD(Si). Break-before-make switching is controlled by 5V digital inputs.

Features

? QML, Per MIL-PRF-38535

? Radiation Performance

- Gamma Dose (γ) 1 x 105 RAD(Si)

? No Latch-Up, Dielectrically Isolated Device Islands

? Pin for Pin Compatible with Intersil HI-303 Series Analog Switches

? Analog Signal Range 15V

? Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)

? Low rON . . . . . . . . . . . . . . . . . . . . . . 60? (Max, Post Rad)

? Low Operating Power . . . . . . . . . . 100μA (Max, Post Rad)