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HSR-634WT

PowerFormCSwitch

PIC

PIC GmbH

IPM-C634

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊美國JDSU

IPM-L634

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊美國JDSU

IRC634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

HEXFETPowerMOSFET

IRF

International Rectifier

IRC634PRF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF634

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli

IRF

International Rectifier

IRF634

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

IRF634

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF634

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF634

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

IRF634

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent-ID=8.1A@TC=25°C ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-DCconv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF634

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF634

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF-634

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

IRF634A

AdvancedPowerMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF634A

AdvancedPowerMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF634A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF634A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF634B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數

  • 型號：

    HS634-SERIES

  • 功能描述：

    Peripheral IC

供應商型號品牌批號封裝庫存備注價格
A
24+
b
133
詢價
Essentra
22+
NA
168
加我QQ或微信咨詢更多詳細信息,
 詢價
HOMSEMI
2022+
TO-220
50000
原廠代理 終端免費提供樣品
 詢價
HOMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現貨
 詢價
HOMSEMI
23+
TO-220
6800
專注配單,只做原裝進口現貨
 詢價
FOXCONN
2023
NA
11506
原廠代理渠道,正品保障
 詢價
日立
22+
DIP
3200
全新原裝品牌專營
 詢價
S
2021+
DIP
6660
百分百原裝正品
 詢價
S/PHILIPS
1815+
CDIP
6528
只做原裝正品現貨!或訂貨,假一賠十!
 詢價
S
22+
DIP
2650
原裝優(yōu)勢!絕對公司現貨
 詢價
更多HS634-SERIES供應商 更新時間2024-10-27 16:30:00

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