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IRF630

9A,200V,0.400Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF630

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TELTokyo Electron Ltd.

東電電子東京電子有限公司

IRF630

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆Dynamicdv/dtRating ◆RepetitiveAvalancheRated ◆FastSwitching ◆EaseofParalleling ◆SimpleDrive

SUNTAC

Suntac Electronic Corp.

IRF630

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF630

N-channel200V-0.35廓-9ATO-220/TO-220FPMeshoverlay??IIPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF630

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

IRF630

N-channelmosfettransistor

Features ?WithTO-220package ?Lowon-stateandthermalresistance ?Fastswitching ?VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HS630

  • 功能描述：

    Peripheral IC

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HOMSEMI
2022+
TO-220F
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
HOMSEMI
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢價(jià)
HOMSEMI
23+
TO-220F
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HOMSEMI
23+
TO-220F
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HOMSEMI
23+
TO-252
302591
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
BSR
23+
65480
詢價(jià)
24+
N/A
82000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
HXY MOSFET華軒陽(yáng)電子
24+
con
3000
國(guó)產(chǎn)代理品牌 價(jià)格交期有優(yōu)勢(shì) 歡迎詢價(jià)
 詢價(jià)
A
24+
b
133
詢價(jià)
Essentra
22+
NA
168
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 詢價(jià)
更多HS630供應(yīng)商 更新時(shí)間2025-7-3 10:05:00

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