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HGTG20N120C3D中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HGTG20N120C3D
廠商型號(hào)

HGTG20N120C3D

功能描述

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

97.79 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 23:00:00

HGTG20N120C3D規(guī)格書(shū)詳情

45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs

and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

Features

?45A, 1200V, TC = 25oC

?1200V Switching SOA Capability

?Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150oC

?Short Circuit Rating

?Low Conduction Loss

產(chǎn)品屬性

  • 型號(hào):

    HGTG20N120C3D

  • 制造商:

    Harris Corporation

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