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首頁>HGTG10N120BND>詳情
HGTG10N120BND 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 FSC/仙童
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號(hào):
HGTG10N120BND
- 制造商:
onsemi
- 類別:
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- IGBT 類型:
NPT
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.7V @ 15V,10A
- 開關(guān)能量:
850μJ(開),800μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開/關(guān))值:
23ns/165ns
- 測(cè)試條件:
960V,10A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT NPT 1200V 35A TO247-3
供應(yīng)商
- 企業(yè):
深圳市納艾斯科技有限公司
- 商鋪:
- 聯(lián)系人:
肖小姐
- 手機(jī):
13117514091
- 詢價(jià):
- 電話:
0755-/82781136/2707495
- 傳真:
0755-82707495
- 地址:
深圳市福田區(qū)華強(qiáng)北路賽格大廈5803A
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