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首頁>HGTD3N60C3S9A>芯片詳情
HGTD3N60C3S 分立半導(dǎo)體產(chǎn)品晶體管 - UGBT、MOSFET - 單 INTERSIL
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號(hào):
HGTD3N60C3S9A
- 制造商:
onsemi
- 類別:
- 包裝:
管件
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2V @ 15V,3A
- 開關(guān)能量:
85μJ(開),245μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 測(cè)試條件:
480V,3A,82 歐姆,15V
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 供應(yīng)商器件封裝:
TO-252AA
- 描述:
IGBT 600V 6A 33W TO252AA
供應(yīng)商
- 企業(yè):
深圳市宏捷佳電子科技有限公司
- 商鋪:
- 聯(lián)系人:
許小姐
- 手機(jī):
13530520535
- 詢價(jià):
- 電話:
0755-83201583/83214703
- 傳真:
0755-22669259
- 地址:
福田區(qū)華強(qiáng)北路上步工業(yè)區(qū)102棟620室
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