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HGTD3N60C3S9A_ONSEMI/安森美半導(dǎo)體_IGBT 晶體管 6a 600V N-Ch IGBT UFS Series正邁科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HGTD3N60C3S9A
- 功能描述:
IGBT 晶體管 6a 600V N-Ch IGBT UFS Series
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市正邁科技有限公司
- 商鋪:
- 聯(lián)系人:
董小姐
- 手機(jī):
18124078320
- 詢價(jià):
- 電話:
18124078320
- 傳真:
0755-83200684
- 地址:
深圳市福田區(qū)華富路振華集團(tuán)華康大廈1棟412室
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