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INA220BIDGST

High-orLow-Side,BidirectionalCurrentandPowerMonitor

TI1Texas Instruments

德州儀器

IPC-220

CompactIndustrialComputerSystemwith10thGenIntel?Core?iCPUSocket(LGA1200)

Features ?Intel?10thGenCore?iCPUsocket-type(LGA1200)withIntel?Q470E/ H420Echipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.2 ?2xRS-232/422/485and2xRS232serialports ?1xNVMeM.2(Q470EOnly),2x2.5HDD/SSD,a

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IPC-220

MachineVisionEdgeSolutionReadyPlatform

Features ?IntuitiveGUIwithoutprogrammingskills ?Flexiblelicensingoptionsincludingfull,ID,alignment ?SupportsuptosixGigEvisioncameraswithupto20Mresolutioninmono andbayerformats ?Supportsconditionaloperator,externalAPIforadvancedapplications

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IPC-220

CompactIndustrialComputerSystemwith6th/7thGenIntel?Core?iCPUSocket(LGA1151)

Features ?Intel?6th/7thGenCore?iCPUsocket-type(LGA1151)withIntel?Q170/ H110chipset ?3xindependentdisplays(thirddisplayoutput(DP)viaoptionalcable) ?2xGigaLanand6xUSB3.0(Q170)/4xUSB3.0(H110) ?2xRS-232/422/485and2xRS232serialports ?2x2.5HDD/SSD,a

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

IRF220

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF220

4.0Aand5.0A,150Vand200V,0.8and1.2Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF220

N-ChannelPowerMOSFETs,7A,150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF220

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF220

NanosecondSwitchingSpeeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF220

HighSpeedApplications

DESCRIPTION ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) ?HighSpeedApplications APPLICATIONS ?Switchingpowersupplies

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    H-M220A

  • 制造商：

    LG Corporation

  • 功能描述：

    16 MB MEMORY CHIP

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