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IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF530A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530FI

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530FI

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530FP

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12? ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■AVALANCHERUGGEDTECHNOLOGY ■APPLICATIONORIENTEDCHARACTERIZATION ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE APPLICAT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF530L

HEXFETPowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530N

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF530N

PowerMOSFET(Vdss=100V,Rds(on)=90mohm,Id=17A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF530N

22A,100V,0.064Ohm,N-ChannelPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.064?,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.intersil.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

Intersil

Intersil Corporation

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HRS-HIROSEELECTRIC
新
905
全新原裝 貨期兩周
 詢價(jià)
Hirose
2020+
N/A
8
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
Hirose
22+
NA
8
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
HIROSE
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價(jià)
HIROSE/廣瀨
2508+
/
233927
一級代理，原裝現(xiàn)貨
 詢價(jià)
GT
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
 詢價(jià)
GT
23+
SOT23-3
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
LT
16+
TO126-2
570
全新原裝現(xiàn)貨
 詢價(jià)
LINEAR/凌特
21+
TO126-2
570
原裝現(xiàn)貨假一賠十
 詢價(jià)
N/A
25+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
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更多GT530供應(yīng)商 更新時(shí)間2025-4-22 16:06:00

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