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IRF610

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers. ?FEATURES ?LowRDS(on) ?VGSRatedat±20V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF610

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF610

N-ChannelPowerMOSFETs3.5A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ●LOWRDS(on) ●VQSRatedat±20V ●SiliconG

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF610

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF610

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF610A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF610A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?LowRDS(on)=1.25Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?3.3A,200V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical7.2nC) ?LowCrss(typical6.8pF) ?Fastswitch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF610L

Surfacemount

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itpro

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    GMD-610F

  • 制造商：

    ALTECH

  • 制造商全稱：

    Altech corporation

  • 功能描述：

    Contactors(9 to 85A) Frame size

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ALTECH
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
COOPER
24+
原廠原封
4000
原裝正品
 詢價(jià)
Eaton
22+
NA
168
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
24+
N/A
82000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
LS/電氣
25+
30000
原裝正品,全系列可訂貨
 詢價(jià)
Altech Corporation
2022+
原廠封裝
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
LS產(chǎn)電
21+
原廠原封
5000
全新原裝 現(xiàn)貨 價(jià)優(yōu)
 詢價(jià)
更多GMD-610F供應(yīng)商 更新時(shí)間2025-6-27 18:01:00

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