首頁 >GA200SA60U>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
GA200SA60U | INSULATED GATE BIPOLAR TRANSISTOR Features ?UltraFast:Optimizedforminimumsaturationvoltageandoperatingfrequenciesupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2,500VoltAC/RMS) ?Verylowinternalinductance(≤5nHtyp.) ? | IRF International Rectifier | IRF | |
GA200SA60U | 包裝:托盤 封裝/外殼:SOT-227-4,miniBLOC 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - IGBT - 模塊 描述:IGBT MOD 600V 200A 500W SOT227B | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | |
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES ?Ultrafast:Optimizedforminimumsaturationvoltageandspeedupto40kHzinhardswitching,>200kHzinresonantmode ?Verylowconductionandswitchinglosses ?Fullyisolatepackage(2500VAC/RMS) ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardo | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda | IRF International Rectifier | IRF | ||
InsulatedGateBipolarTransistorUltralowVCE(on),342A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda | IRF International Rectifier | IRF | ||
InsulatedGateBipolarTransistorUltralowVCE(on),342A FEATURES ?Standard:Optimizedforminimumsaturation voltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?ComplianttoRoHSdirective | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InsulatedGateBipolarTransistorUltralowVCE(on),342A InsulatedGateBipolarTransistorUltralowVCERevision:22-Jul-10 (on),342A FEATURES ?Standard:Optimizedforminimumsaturationvoltageandlowspeedupto5kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2500VAC) ?Verylowinternalinductance(5nHtypi | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
INSULATEDGATEBIPOLARTRANSISTOR INSULATEDGATEBIPOLARTRANSISTOR Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequenciesupto1kHz ?Lowestconductionlossesavailable ?Fullyisolatedpackage(2,500voltAC) ?Verylowinternalinductance(5nHtyp.) ?Industrystanda | IRF International Rectifier | IRF | ||
SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation) | SENSITRON SENSITRON SEMICONDUCTOR | SENSITRON | ||
SILICONSCHOTTKYRECTIFIERDIE UltralowReverseLeakageCurrent SoftReverseRecoveryatLowandHighTemperature VeryLowForwardVoltageDrop LowPowerLoss,HighEfficiency HighSurgeCapacity GuardRingforEnhancedDurabilityandLongTermReliability GuaranteedReverseAvalancheCharacteristics Electrically/Mech | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微電子桑德斯微電子器件(南京)有限公司 | SMCDIODE | ||
SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation) | SENSITRON SENSITRON SEMICONDUCTOR | SENSITRON | ||
SILICONSCHOTTKYRECTIFIERDIEVeryLowForwardVoltageDrop(150?CTJOperation) | SENSITRON SENSITRON SEMICONDUCTOR | SENSITRON | ||
InsulatedGateBipolarTransistor(UltrafastSpeedIGBT),100A | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InsulatedGateBipolarTransistor(TrenchIGBT),200A FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?5μsshortcircuitcapability ?TJmaximum=175°C ?Fullyisolatedpackage ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategoriz | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InsulatedGateBipolarTransistor(TrenchIGBT),200AS FEATURES ?TrenchIGBTtechnologywithpositive temperaturecoefficient ?SquareRBSOA ?5μsshortcircuitcapability ?TJmaximum=175°C ?Fullyisolatedpackage ?Verylowinternalinductance(≤5nHtypical) ?Industrystandardoutline ?ULapprovedfileE78996 ?Materialcategoriz | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
GA200SA60U
- 制造商:
Vishay General Semiconductor - Diodes Division
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - IGBT - 模塊
- 包裝:
托盤
- 配置:
單路
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.9V @ 15V,100A
- 輸入:
標(biāo)準(zhǔn)
- NTC 熱敏電阻:
無
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
底座安裝
- 封裝/外殼:
SOT-227-4,miniBLOC
- 供應(yīng)商器件封裝:
SOT-227B
- 描述:
IGBT MOD 600V 200A 500W SOT227B
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
MODULE |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢價(jià) | ||
IR |
16+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
23+ |
200A600V |
362 |
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
INTERNATIONA |
05+ |
原廠原裝 |
4220 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
VishaySemiconductorDiode |
23+ |
IGBTUFAST600V100ASOT227 |
1690 |
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量 |
詢價(jià) | ||
IR |
24+ |
模塊 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
HAR |
23+ |
DIP-16 |
6500 |
全新原裝假一賠十 |
詢價(jià) | ||
IR |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營-可開原型號(hào)增稅票 |
詢價(jià) | ||
IR |
24+ |
2173 |
公司大量全新正品 隨時(shí)可以發(fā)貨 |
詢價(jià) |
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