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FSPYC260F

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260F4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FT260

FutureTechnologyDevicesInternationalLtd.

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q-R

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260Q-x

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260S

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260S-U

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT260S-x

HID-classUSBtoUART/I2CBridgeIC

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FTC260

PointlevelswitchwithbuildupcompensationNocalibrationnecessary

YourBenefits ?Completeunitconsistingoftheprobeandelectronicinsert: –simplemounting –nocalibrationonstart-up ?Activebuild-upcompensation –accurateswitchpoint –highoperationalsafety ?Mechanicallyrugged –nowearingparts –longoperatinglife –nomaintenance ?

EHEndress+Hauser Group Services AG

恩德斯

G260

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

EIC

EIC discrete Semiconductors

G260

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

GBAH260

OutdoorOFCMLT:ARAMIDPEwith6Tubesof?1.9mm60fMMOM2.

ProductDescription OutdoordrycoreopticalfiberMultiLooseTubecablewitharamidyarnsasstrengthmemberandpolyethyleneouterjacket.Existingoutof6tubeswitha diameterof1.9mmwith60fibers(5tx12f)MMOM2.

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

GBCH260

OutdoorOFCMLT:GLASSYARNSCSTPEwith6Tubesof?1.9mm60fMMOM2.

ProductDescription OutdoordrycoreopticalfiberMultiLooseTubecablewithglassyarnsasstrengthmember,CorrugatedSteelTape(FullRodentProtected)armorand polyethyleneouterjacket.Productfeature:ThiscablehasimprovedrodentprotectionbyCorrugatedSteelTape(FullRodentProte

BELDENBelden Inc.

百通電纜設(shè)計(jì)科技有限公司

GF260

0.2AHighVoltageFastRecoveryRectifiers

TAITRON

TAITRON Components Incorporated

GFC260

NChannelPowerMOSFETwithextremelylowRDS(ON)

GSG

Gunter Seniconductor GmbH.

詳細(xì)參數(shù)

  • 型號(hào):

    FSPYC260F

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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ISL
05+
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4300
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ISL
23+
65480
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FAIRCHILD
23+
NA
19960
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FSC
2016+
DIP8
6528
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FSC
2016+
DIP8
3500
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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FSC
24+
DIP8
5000
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FAIRCHILD
23+
DIP-8
66800
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FSC
2020+
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80000
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FSC
24+
DIP8
65200
一級(jí)代理/放心采購(gòu)
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24+
DIP-8
6430
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更多FSPYC260F供應(yīng)商 更新時(shí)間2024-12-29 9:16:00