零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGE01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplications.ThedeviceissuitedforDC-DC,DC-ACconvertersfortelecom,industrialandconsumerenvironment. Features *Dynami | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGJ01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsand suitedforAC/DCconverters. Features *Dynamicdv/dtRating *SimpleDriveRequir | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
NChannelMOSFET [STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature | STANSON Stanson Technology | STANSON | ||
NChannelMOSFET | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
600VN-ChannelMOSFETs | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET600V,8.5ohm | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelPowerMOSFET600V,8.5 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEWINORIGINAL |
24+ |
SOD-1231206 |
27200 |
新進(jìn)庫存/原裝 |
詢價(jià) | ||
ORIGIN |
23+ |
SOD-123 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Origin |
23+ |
SOD-123 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ORIGIN |
2022 |
SOD-123 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
Origin |
03+ |
SOD-123 |
20000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Origin |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
ORIGIN |
23+ |
NA/ |
20800 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
SOD-12312 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
ORIGIN |
23+ |
SOT |
8890 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
只做原裝 |
24+ |
SOT |
36520 |
一級(jí)代理/放心采購 |
詢價(jià) |
相關(guān)規(guī)格書
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