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GJ01N60

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheGJ01N60providethedesignerwiththebestcombinationoffastswitching. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsand suitedforAC/DCconverters. Features *Dynamicdv/dtRating *SimpleDriveRequir

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GM01N60D/U

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GM01N60DSLASHU

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H01N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60I

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60J

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60S

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H01N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M01N60

NChannelMOSFET

[STANSONTECHNOLOGY] RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

詳細(xì)參數(shù)

  • 型號:

    GJ01N60

  • 制造商:

    GTM

  • 制造商全稱:

    GTM

  • 功能描述:

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
GTM
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價
GTM
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
SECOS
22+
SOT-252
20000
保證原裝正品,假一陪十
詢價
SECOS
22+
SOT-252
100000
代理渠道/只做原裝/可含稅
詢價
GTM
04PB
TO252
1377
詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
GTM
23+
TO-252
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
MUR
156000
全新原裝現(xiàn)貨 樣品可售
詢價
GJ
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
詢價
GTM
23+
TO-252
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
更多GJ01N60供應(yīng)商 更新時間2025-3-20 11:04:00