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FRM130H

14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM130R

14A,100V,0.180Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130D

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130H

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS130R

12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRX130D

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130H

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130R

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FSL130D

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL130R

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLH-S130C

2012Size1200/1400MHzChipMultilayerSplitter/Combiner

HITACHI-METALSHitachi Metals, Ltd

日立金屬日立金屬有限公司

FSS130D

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS130R

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FVDB-130B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默普萊默電子(蕪湖)有限公司

FVDB-130BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默普萊默電子(蕪湖)有限公司

FVDT-130BE

ThreePhaseDoubleStage

PREMOPREMO CORPORATION S.L

普萊默普萊默電子(蕪湖)有限公司

FVSB-130B

ThreePhaseOneStage

PREMOPREMO CORPORATION S.L

普萊默普萊默電子(蕪湖)有限公司

FVT130

Hightemperaturevitreouscoating

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

G130

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

EIC

EIC discrete Semiconductors

G130

SiliconZ??iodes

FEATURES ?Highreliability ?Voltagerange10Vto270VFitsonto5mmSMDfootpads ?Waveandreflowsolderable ?Glasspassivatedjunction

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯電子深圳市泰迪斯電子科技有限公司

詳細參數(shù)

  • 型號:

    FRM130H

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs

供應(yīng)商型號品牌批號封裝庫存備注價格
FINISAR
19+
MODL
20000
4
詢價
FINISAR
23+
MODL
20000
原廠原裝正品現(xiàn)貨
詢價
ROHN
7
全新原裝 貨期兩周
詢價
N
2021+
DIP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
N
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
N
2022
DIP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
N
23+
NA/
4132
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
YAGEO
22+
NA
5000
全新原裝品牌專營
詢價
FERROXCUBE
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
Superior Electric
2022+
1
全新原裝 貨期兩周
詢價
更多FRM130H供應(yīng)商 更新時間2024-11-8 16:02:00