零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FRM130H | 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | |
14A,100V,0.180Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
12A,100V,0.195Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedN-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedN-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedN-ChannelPowerMOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | Intersil Intersil Corporation | Intersil | ||
8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
2012Size1200/1400MHzChipMultilayerSplitter/Combiner | HITACHI-METALSHitachi Metals, Ltd 日立金屬日立金屬有限公司 | HITACHI-METALS | ||
11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
ThrrePhaseDoubleStageFilterforInvertersandPowerDrives | PREMOPREMO CORPORATION S.L 普萊默普萊默電子(蕪湖)有限公司 | PREMO | ||
ThrrePhaseDoubleStageFilterforInvertersandPowerDrives | PREMOPREMO CORPORATION S.L 普萊默普萊默電子(蕪湖)有限公司 | PREMO | ||
ThreePhaseDoubleStage | PREMOPREMO CORPORATION S.L 普萊默普萊默電子(蕪湖)有限公司 | PREMO | ||
ThreePhaseOneStage | PREMOPREMO CORPORATION S.L 普萊默普萊默電子(蕪湖)有限公司 | PREMO | ||
Hightemperaturevitreouscoating | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SIDACs SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts | EIC EIC discrete Semiconductors | EIC | ||
SiliconZ??iodes FEATURES ?Highreliability ?Voltagerange10Vto270VFitsonto5mmSMDfootpads ?Waveandreflowsolderable ?Glasspassivatedjunction | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯電子深圳市泰迪斯電子科技有限公司 | TAYCHIPST |
詳細參數(shù)
- 型號:
FRM130H
- 制造商:
INTERSIL
- 制造商全稱:
Intersil Corporation
- 功能描述:
14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FINISAR |
19+ |
MODL |
20000 |
4 |
詢價 | ||
FINISAR |
23+ |
MODL |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
ROHN |
新 |
7 |
全新原裝 貨期兩周 |
詢價 | |||
N |
2021+ |
DIP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
N |
23+ |
DIP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
N |
2022 |
DIP |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
N |
23+ |
NA/ |
4132 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
YAGEO |
22+ |
NA |
5000 |
全新原裝品牌專營 |
詢價 | ||
FERROXCUBE |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
Superior Electric |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 |
相關(guān)規(guī)格書
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