| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSL130R | 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | |
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | Intersil Intersil Corporation | Intersil | ||
2012Size1200/1400MHzChipMultilayerSplitter/Combiner | HITACHI-METALSHitachi Metals, Ltd 日立金屬日立金屬有限公司 | HITACHI-METALS | ||
11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | Intersil Intersil Corporation | Intersil | ||
ThrrePhaseDoubleStageFilterforInvertersandPowerDrives | PREMOPREMO CORPORATION S.L 普萊默普萊默電子（蕪湖）有限公司 | PREMO | ||
ThrrePhaseDoubleStageFilterforInvertersandPowerDrives | PREMOPREMO CORPORATION S.L 普萊默普萊默電子（蕪湖）有限公司 | PREMO | ||
ThreePhaseDoubleStage | PREMOPREMO CORPORATION S.L 普萊默普萊默電子（蕪湖）有限公司 | PREMO | ||
ThreePhaseOneStage | PREMOPREMO CORPORATION S.L 普萊默普萊默電子（蕪湖）有限公司 | PREMO | ||
Hightemperaturevitreouscoating | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SIDACs SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts | EIC EIC discrete Semiconductors | EIC | ||
SiliconZ??iodes FEATURES ?Highreliability ?Voltagerange10Vto270VFitsonto5mmSMDfootpads ?Waveandreflowsolderable ?Glasspassivatedjunction | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯電子深圳市泰迪斯電子科技有限公司 | TAYCHIPST | ||
SIDACs SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
DO-35Case | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
130WattsQuadOutputMedical&IndustrialGrade SPECIALFEATURES ?3”x5”x1.35”Package ?130Wwithair,100WConvection Cooled ?UniversalInput90to264VAC ?Efficiency87Typical ?MeetsClassBRadiated&Conducted EMI ?5V@1AStandbyOutput,Remote Inhibit ?NoMinimumLoadRequired ?>7YearE-capLife ?3YearWarr | ADVANCEDENERGYAdvanced Energy Industries, Inc. 先進能源工業(yè)先進能源工業(yè)公司 | ADVANCEDENERGY | ||
130WattsQuadOutputMedical&IndustrialGrade SPECIALFEATURES ?3”x5”x1.35”Package ?130Wwithair,100WConvection Cooled ?UniversalInput90to264VAC ?Efficiency87Typical ?MeetsClassBRadiated&Conducted EMI ?5V@1AStandbyOutput,Remote Inhibit ?NoMinimumLoadRequired ?>7YearE-capLife ?3YearWarr | ADVANCEDENERGYAdvanced Energy Industries, Inc. 先進能源工業(yè)先進能源工業(yè)公司 | ADVANCEDENERGY | ||
130WattsQuadOutputMedical&IndustrialGrade SPECIALFEATURES ?3”x5”x1.35”Package ?130Wwithair,100WConvection Cooled ?UniversalInput90to264VAC ?Efficiency87Typical ?MeetsClassBRadiated&Conducted EMI ?5V@1AStandbyOutput,Remote Inhibit ?NoMinimumLoadRequired ?>7YearE-capLife ?3YearWarr | ADVANCEDENERGYAdvanced Energy Industries, Inc. 先進能源工業(yè)先進能源工業(yè)公司 | ADVANCEDENERGY | ||
NChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG |
詳細參數(shù)
- 型號：
FSL130R
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
11+ |
DIP8 |
6000 |
絕對原裝自己現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
2022+ |
DIP8 |
300 |
原廠代理 終端免費提供樣品 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
NA/ |
300 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
FAIRCHILD/仙童 |
2022+ |
DIP8 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
2017+ |
DIP8 |
28562 |
只做原裝正品假一賠十! |
詢價 | |||
ON現(xiàn)貨 |
2022+ |
DIP-8 |
350000 |
專注工業(yè)、軍工級別芯片,十五年優(yōu)質(zhì)供應商 |
詢價 | ||
三年內(nèi) |
1983 |
納立只做原裝正品13590203865 |
詢價 | ||||
ONSemiconductor |
23+ |
8-DIP |
66800 |
全新更新庫存原廠原裝現(xiàn)貨 |
詢價 | ||
ON Semiconductor |
21+ |
36500 |
一級代理/放心采購 |
詢價 | |||
Fairchild Semiconductor |
2021+ |
SOIC |
57500 |
科研單位合格供應商!現(xiàn)貨庫存 |
詢價 |
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