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首頁 >FQU11P06TU>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQU11P06TU	文件：1.18404 Mbytes Page：9 Pages	P-Channel QFET? MOSFET -60 V, -9.4 A, 185 m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB11P06	文件：333.66 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQB11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQB11P06TM	文件：1.046329 Mbytes Page：9 Pages	P-ChannelQFETMOSFET-60V,-11.4A,175m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQD11P06	文件：615.94 Kbytes Page：9 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQD11P06	文件：353.73 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQD11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQD11P06TM	文件：912.3 Kbytes Page：4 Pages	P-channelEnhancementModePowerMOSFET Features ?VDS=-60V,ID=-20A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD11P06TM	文件：990.08 Kbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
FQD11P06TM	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI11P06	文件：660.81 Kbytes Page：9 Pages	60VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI11P06	文件：653.88 Kbytes Page：9 Pages	60VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP11P06	文件：374 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF11P06	文件：646.59 Kbytes Page：8 Pages	60VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU11P06	文件：377.67 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU11P06	文件：1.66632 Mbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
FQU11P06	文件：1.18404 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-60V,-9.4A,185m廓 GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild

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詳細參數(shù)

型號：
FQU11P06TU
功能描述：
MOSFET 60V P-Channel QFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
中天科工半導體（深圳）有限公司	FQU11P06TU	onsemi	24+	I-PAK	30000	晶體管-分立半導體產(chǎn)品-原裝正品	詢價
深圳市高捷芯城科技有限公司	FQU11P06TU	onsemi(安森美)	23+	IPAK-3	11346	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市博浩通科技有限公司	FQU11P06TU	Fairchild	23+	I-PAK(TO-251AA)	7750	全新原裝優(yōu)勢	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	FQU11P06TU	原廠	23+	TO-251	5000	原裝正品,假一罰十	詢價
深圳市達恩科技有限公司	FQU11P06TU	ONSemiconductor	18+	NA	3632	進口原裝正品優(yōu)勢供應QQ3171516190	詢價
深圳市科恒偉業(yè)電子有限公司	FQU11P06TU	FAIRCHILD	1816+	TO-251	6523	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價
深圳市鼎盛源芯科技有限公司	FQU11P06TU	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢	詢價
深圳市華斯頓科技有限公司	FQU11P06TU	FAIRCHILD	22+23+	TO251	11849	絕對原裝正品全新進口深圳現(xiàn)貨	詢價
深圳兆威電子有限公司	FQU11P06TU	FAIRCHILD/仙童	22+	TO251	34606	原裝正品現(xiàn)貨	詢價
深圳市納立科技有限公司	FQU11P06TU		三年內(nèi)		1983	納立只做原裝正品13590203865	詢價

更多FQU11P06TU供應商更新時間2024-11-8 15:13:00

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