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FQB11P06

60V P-Channel MOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-11.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.175Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB11P06

60V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06TM

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB11P06_04

60V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

P-ChannelQFET?MOSFET-60V,-9.4A,185m廓

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

60VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD11P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-9.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.185Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforus

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD11P06TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-60V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD11P06TM

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    FQB11P06

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    60V P-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FSC
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
仙童
05+
TO-263
3800
原裝進口
 詢價
FAIRCHILD
24+
TO-263(D2PAK)
8866
詢價
FAIRCHILD
24+
TO-263
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FSC
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
FCS
1822+
TO-2632L(D2PAK)
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
FAIRCHIL
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
FAIRCHI
21+
TO-263
12588
原裝正品,自己庫存 假一罰十
 詢價
FAIRCHILD
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
更多FQB11P06供應(yīng)商 更新時間2025-4-17 11:04:00

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