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FQP33N10

N-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF33N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF33N10L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.052Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF33N10L

100VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GLU33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

GLX33N10

SURFCOILSMTINDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ISP33N10L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KSM33N10

100VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE-FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain-to-sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP33N10

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQI33N10TU

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
21+
TO-262
1650
原裝現(xiàn)貨假一賠十
 詢價(jià)
FAIRCHILD/仙童
23+
TO-262
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
FSC
0012+
TO-262
1650
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
FSC
23+
TO-262
28000
原裝正品
 詢價(jià)
FSC
23+
TO-262
12800
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
FAIRCHILD/仙童
23+
NA/
4900
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢價(jià)
FSC
23+
TO-262
1650
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD/仙童
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHILD/仙童
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
仙童
06+
TO-262
2500
原裝
 詢價(jià)
更多FQI33N10TU供應(yīng)商 更新時(shí)間2024-12-27 8:00:00

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