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IRF530

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

N??hannelEnhancement??odeSiliconGate

TMOSE?FET.?PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain?to?sourcediodewithafastrecoverytime.Designedfo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF530

14.0A100VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF530

14A,100V,0.160Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF530

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF530

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF530

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF530

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    FM530-W

  • 制造商：

    BACO Controls Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
RECTRON
19+
DO-214AB
200000
詢價
RECTRON
1948+
DO-214AB
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
RECTRON
20+
DO-214AB
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
RECTRON
24+
DO-214AB
18800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
RECTRON
24+
DO-214AB
56000
原裝現(xiàn)貨假一賠十
 詢價
RECTRON
DO-214AB
56000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
RECTRON
23+
DO-214AB
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
RECTRON
23+
DO-214AB
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
RECTRON
2023+PB
DO-214AB
56000
詢價
FM/富滿
23+
ESOP8
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
更多FM530-W供應(yīng)商 更新時間2025-3-28 8:30:00

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