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IRF530中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF530
廠商型號(hào)

IRF530

功能描述

N??hannel Enhancement??ode Silicon Gate

文件大小

192.7 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-6 22:59:00

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IRF530規(guī)格書詳情

TMOS E?FET.? Power Field Effect Transistor

N?Channel Enhancement?Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    IRF530

  • 功能描述:

    MOSFET N-Chan 100V 9.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
onsemi(安森美)
23+
TO220
7350
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NA/
850
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IR
2016+
TO220
3000
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IR
23+
DIP
20000
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VISHAY
2020+
TO-220
80000
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ST/意法
22+
TO-220
100000
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ST
21+
TO2203
13880
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IR
24+
TO 220
161466
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TO-220
38900
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23+
TO220F
6850
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