天堂√最新版在线资源,色婷婷亚洲十月十月色天,国产狂喷潮在线观看中文

首頁(yè) >FKN1N60SA>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FKN1N60SA	文件：300.13 Kbytes Page：7 Pages	TRIAC (Silicon Bidirectional Thyristor)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FKN1N60SA	文件：100 bytes Page：1 Pages	Package：TO-226-3，TO-92-3 標(biāo)準(zhǔn)主體（!--TO-226AA）；包裝：散裝類(lèi)別：分立半導(dǎo)體產(chǎn)品晶閘管 - TRIAC 描述：TRIAC SENS GATE 600V 1A TO92-3	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
FQB1N60	文件：545.42 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60	文件：543.8 Kbytes Page：9 Pages	600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60	文件：549.28 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60C	文件：758.35 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60C	文件：640.5 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60C	文件：824.93 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQD1N60C	文件：305.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQD1N60CTM	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60TM	文件：549.28 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI1N60	文件：545.42 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQN1N60C	文件：677.13 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP1N60	文件：519.409 Kbytes Page：8 Pages	QFETN-CHANNEL FEATURES ?AdvancedNewDesign ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:5.0nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):9.3?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP1N60	文件：65.34 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	TGS Tiger Electronic Co.,Ltd	TGS
FQPF1N60	文件：542.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60T	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

12 3 >>>

產(chǎn)品屬性

產(chǎn)品編號(hào)：
FKN1N60SA
制造商：
onsemi
類(lèi)別：
分立半導(dǎo)體產(chǎn)品 > 晶閘管 - TRIAC
包裝：
散裝
雙向可控硅類(lèi)型：
邏輯 - 靈敏柵極
電流 - 非重復(fù)浪涌 50、60Hz (Itsm)：
9A，10A
配置：
單路
安裝類(lèi)型：
通孔
封裝/外殼：
TO-226-3，TO-92-3 標(biāo)準(zhǔn)主體（!--TO-226AA）
供應(yīng)商器件封裝：
TO-92-3
描述：
TRIAC SENS GATE 600V 1A TO92-3

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市高捷芯城科技有限公司	FKN1N60SA	onsemi(安森美)	23+	TO-92-3	1612	原廠(chǎng)訂貨渠道,支持BOM配單一站式服務(wù)	詢(xún)價(jià)
深圳市永貝爾科技有限公司	FKN1N60SA	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣	詢(xún)價(jià)
深圳市正邁科技有限公司	FKN1N60SA	FSC/ON	23+	原包裝原封 □□	9090	原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢(xún) 庫(kù)存	詢(xún)價(jià)
瀚佳科技(深圳)有限公司	FKN1N60SA	FAIRCHILD	24+		35200	一級(jí)代理/放心采購(gòu)	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	FKN1N60SA	NEXPERIA/安世	23+	SOT1215	69820	終端可以免費(fèi)供樣,支持BOM配單!	詢(xún)價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FKN1N60SA	FAIRCHILD/仙童	23+	TO-220	10000	公司只做原裝正品	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	FKN1N60SA	FAIRCHILD/仙童	22+	TO-220	6000	十年配單,只做原裝	詢(xún)價(jià)
深圳市鵬順微電子科技有限公司	FKN1N60SA	ON Semiconductor	2022+	TO-226-3,TO-92-3 標(biāo)準(zhǔn)主體(!-	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷(xiāo)	詢(xún)價(jià)
深圳市躍創(chuàng)芯科技有限公司	FKN1N60SA	FAIRCHILD/仙童	22+	TO-220	25000	只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單	詢(xún)價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	FKN1N60SA	Fairchild	23+		33500		詢(xún)價(jià)

更多FKN1N60SA供應(yīng)商更新時(shí)間2025-1-18 8:12:00

產(chǎn)品屬性

相關(guān)規(guī)格書(shū)

相關(guān)庫(kù)存